HGN035N10A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGN035N10A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 144 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 923 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN035N10A
HGN035N10A Datasheet (PDF)
hgn035n10a.pdf

P-1HGN035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness144 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Ci
hgn035n10al.pdf

P-1HGN035N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness149 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead FreeApplicationDrain Synchronous Rectific
hgn035n08al.pdf

HGN035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness118 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Recti
hgn035n08a.pdf

HGN035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3RDS(on),typ mW Enhanced Body diode dv/dt capability121 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High
Другие MOSFET... HGN027N06S , HGN028N08A , HGN028NE6A , HGN028NE6AL , HGN029NE4SL , HGN032NE4S , HGN035N08A , HGN035N08AL , IRF730 , HGN035N10AL , HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL , HGN040N06S , HGN040N06SL , HGN042N10A .
History: STF23NM60ND | MTP4835L3 | IXTH48N20 | UT100N03L-TQ2-R | BL3N90E-P | CJX3134K | WFP650
History: STF23NM60ND | MTP4835L3 | IXTH48N20 | UT100N03L-TQ2-R | BL3N90E-P | CJX3134K | WFP650



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