HGN053N06S datasheet, подбор замены

 ..1. Size:902K  cn hunteck
 hgn053n06s.pdf 

HGN053N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 4.1 RDS(on),typ mW Optimized for high speed switching 91 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching

 0.1. Size:775K  cn hunteck
 hgn053n06sl.pdf 

HGN053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 4.1 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 90 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous

 9.1. Size:891K  cn hunteck
 hgn059n08a.pdf 

HGN059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 83 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hig

 9.2. Size:781K  cn hunteck
 hgn052n10sl.pdf 

HGN052N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.6 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6 RDS(on),typ VGS=4.5V m switching,Logic level 115 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Dr

 9.3. Size:898K  cn hunteck
 hgn050n10a.pdf 

P-1 HGN050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability 102 A ID (Silicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir

 9.4. Size:757K  cn hunteck
 hgn058n08sl.pdf 

HGN058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.9 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 100 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Synchronous Rectification

 9.5. Size:902K  cn hunteck
 hgn055n12sl.pdf 

P-1 HGN055N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic Level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 96 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectifica

 9.6. Size:902K  cn hunteck
 hgn050n10al.pdf 

HGN050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 4.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.7 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 103 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Drain Synchronous Rectific

 9.7. Size:896K  cn hunteck
 hgn059n08al.pdf 

HGN059N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 82 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Pacakge Limited) Lead Free, Halogen Free Drain Application Synchron

 9.8. Size:892K  cn hunteck
 hgn055n12s.pdf 

P-1 HGN055N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 111 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High S