HGP028NE6AL datasheet, подбор замены

 ..1. Size:905K  cn hunteck
 hgp028ne6al.pdf 

HGP028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 174 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a

 4.1. Size:958K  cn hunteck
 hgb028ne6a hgp028ne6a.pdf 

HGB028NE6A , HGP028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 181 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H

 7.1. Size:976K  cn hunteck
 hgb028n08a hgp028n08a.pdf 

HGB028N08A , HGP028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 182 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectif

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf 

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited)

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 hgb029n06sl hgp029n06sl.pdf 

HGB029N06SL HGP029N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 1.8 RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic Level VGS=4.5V 2.7 RDS(on),typ m Enhanced Body diode dv/dt capability 2.1 RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche Ruggedness VGS=4.5V 3.0 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 198 A ID (Si

 9.3. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf 

, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli

 9.4. Size:971K  cn hunteck
 hgb021n08a hgp021n08a.pdf 

HGB021N08A , HGP021N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.7 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2 RDS(on),typ mW Enhanced Avalanche Ruggedness 285 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectific

 9.5. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf 

, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap

 9.6. Size:823K  cn hunteck
 hgb029ne4sl hgp029ne4sl.pdf 

HGB029NE4SL HGP029NE4SL P-1 , 45V N-Ch Power MOSFET 45 V VDS Feature 2.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 2.9 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 2.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 3.2 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 182 A ID (Sillicon Limited)

 9.7. Size:1042K  cn hunteck
 hgb027n10a hgk027n10a hgp027n10a.pdf 

HGB027N10A , P-1 HGK027N10A HGP027N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested 248 A ID (Sillicon Limited) Lead Free, Halogen Free

 9.8. Size:972K  cn hunteck
 hgb023ne6a hgp023ne6a.pdf 

, HGB023NE6A HGP023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.5 RDS(on),typ mW Enhanced Avalanche Ruggedness 190 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Recti

 9.9. Size:1055K  cn hunteck
 hgb020n10s hgk020n10s hgp020n10s.pdf 

, P-1 HGB020N10S HGK020N10S HGP020N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 1.6 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 1.8 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 1.9 mW 100% UIS Tested, 100% Rg Tested 327 A ID (Sillicon Limited) Lead Free, Halogen Free 180 A ID (Package Limit

 9.10. Size:979K  cn hunteck
 hgb027n12s hgp027n12s.pdf 

, P-1 HGB027N12S HGP027N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 2 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 2.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 269 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificatio