FDS8984 - описание и поиск аналогов

May 2007 FDS8984 tm N-Channel PowerTrench MOSFET 30V, 7A, 23m General Description Features Max rDS(on) = 23m , VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m , VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

Fabruary 2010 FDS8984_F085 tm N-Channel PowerTrench MOSFET 30V, 7A, 23m General Description Features Max rDS(on) = 23m , VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m , VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been opti

May 2007 FDS8984 tm N-Channel PowerTrench MOSFET 30V, 7A, 23m General Description Features Max rDS(on) = 23m , VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m , VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for

FDS8984-F085 N-Channel PowerTrench MOSFET 30V, 7A, 23m General Description Features Max rDS(on) = 23m , VGS = 10V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m , VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for low gate c

April 2008 tm FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on) = 0.

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high density process is especially tailor

February 2010 tm FDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize RDS(on

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

November 2010 FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn

November 2013 FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m Features General Description These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using Fairchild Semiconductor's Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A advanced PowerTrench process th at

November 2005 FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1 N-Channel power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench 7.0A, 35V RDS(on) = 0.024 @ VGS = 10V process that has been especially tailored to minimize RDS(on) = 0.032 @ VGS = 4.

June 2011 FDS89161LZ Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

January 2011 FDS8978 N-Channel PowerTrench MOSFET 30V, 7.5A, 18m Features General Description rDS(on) = 18m , VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 21m , VGS = 4.5V, ID = 6.9A either synchronous or conventional switching PWM controllers. It has been optimized for low

June 2006 FDS8962C Dual N & P-Channel PowerTrench MOSFET Features General Description Q1 N-Channel These dual N- and P-Channel enhancement mode power field 7.0A, 30V RDS(on) = 0.030 @ VGS = 10V effect transistors are produced using Fairchild Semiconductor s RDS(on) = 0.044 @ VGS = 4.5V advanced PowerTrench process that has been especially tailored to minimize on-state re

February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 5.5 A, 30 V. RDS(ON) = 0.030 @ VGS = 4.5 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.038 @ VGS = 2.5 V. cell density, DMOS technology. This very high density process is especially tailore

June 2011 FDS89161 Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power N-Channel 5.5 A,30 V, RDS(ON)=0.030 @ VGS=4.5 V field effect transistors are produced using Fairchild's RDS(ON)=0.038 @ VGS=2.5 V. proprietary, high cell density, DMOS technology. This very P-Channel -4 A,-20 V, RDS(

December 2010 FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 m Features General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan

FDS8949-F085 Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using ON Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

FDS8958A-F085 Dual N & P-Channel PowerTrench MOSFET Features General Description Q1 N-Channel These dual N- and P-Channel enhancement 7.0A, 30V RDS(on) = 0.028 @ VGS = 10V mode power field effect transistors are produced RDS(on) = 0.040 @ VGS = 4.5V using ON Semiconductor s advanced PowerTrench process that has been especially Q2 P-Channel tailored to m

FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON Features Semiconductor s advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc

FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel 30 V, 6.4 A, 26 m Q2-P-Channel -30 V, -4.5 A, 51 m General Description Features These dual N- and P-Channel enhancement mode power field Q1 N-Channel effect transistors are produced using ON Semiconductor's advanced PowerTrench process th at has been especially Max rDS(on) = 26 m at VGS = 10 V, ID = 6.4 A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET N-Channel Enhancement MOSFET FDS89161 (KDS89161) SOP-8 Features VDS (V) = 100V ID = 2.7 A RDS(ON) 105m (VGS = 10V) 1.50 0.15 RDS(ON) 160m (VGS = 4.5V) High performance trench technology for extremely low rDS(on) CDM ESD Protection Level > 2KV typical G2 D2 5 4 D2 S2 Q2 6 3 D1 G1 7 2 Q1 D1 8 1 S1 atings Ta = 25

FDS8960C www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS

FDS8949 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel