HGW105N15SL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGW105N15SL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 333 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 302 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
Тип корпуса: TO-262
Аналог (замена) для HGW105N15SL
HGW105N15SL Datasheet (PDF)
hgw105n15sl.pdf

HGW105N15SLP-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic Level9RDS(on),typ m Enhanced Body diode dv/dt capability9ID (Sillicon Limited) m Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification
hgw105n15m.pdf

HGW105N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-262 8.8RDS(on),typ m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2
hgw100n12sl.pdf

HGW100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin
hgw100n12s.pdf

HGW100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-262 8.6RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2TO-262
Другие MOSFET... HGT055N15S , HGW053N06SL , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL , HGW105N15M , 12N60 , HGW130N12S , HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 .
History: APT60M80L2VRG | PJA3405 | TSP4N60M | BUK7E2R7-30B | PJA3404 | FG654301 | STW32N65M5
History: APT60M80L2VRG | PJA3405 | TSP4N60M | BUK7E2R7-30B | PJA3404 | FG654301 | STW32N65M5



Список транзисторов
Обновления
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
20n50 | 2sc869 | tip29 transistor equivalent | 2n555 | 2sa564a | c815 transistor | ksa1381 equivalent | 2sa1306