Справочник MOSFET. HTN021N03

 

HTN021N03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HTN021N03
   Маркировка: TN021N03
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 59 nC
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 540 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для HTN021N03

 

 

HTN021N03 Datasheet (PDF)

 ..1. Size:871K  cn hunteck
 htn021n03.pdf

HTN021N03 HTN021N03

HTN021N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

 9.1. Size:918K  cn hunteck
 htn027n03p.pdf

HTN021N03 HTN021N03

HTN027N03P P-130V N-Ch Power MOSFET30 VVDSFeature2.9RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability122 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Sw

 9.2. Size:773K  cn hunteck
 htn020n04p.pdf

HTN021N03 HTN021N03

HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync

 9.3. Size:917K  cn hunteck
 htn020n03.pdf

HTN021N03 HTN021N03

HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

 9.4. Size:552K  cn hunteck
 htn027p02.pdf

HTN021N03 HTN021N03

HTN027P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness2.7RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ VGS=-2.5V m Lead Free, Halogen Free-100 AID (Sillicon Limited)DrainApplication Hard Switching and High Speed Circuit

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