May 2001 FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 2.9 A, 30 V R = 130 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 200 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of g

July 2007FDS9958tmDual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the RoHS

November 2008FDS9958_F085Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105mFeatures General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5Aprocess that has been especially tailored to minimize the o

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur