FDS9953A - описание и поиск аналогов

May 2001 FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 2.9 A, 30 V R = 130 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 200 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of g

July 2007 FDS9958 tm Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105m Features General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5A process that has been especially tailored to minimize the RoHS

November 2008 FDS9958_F085 Dual P-Channel PowerTrench MOSFET -60V, -2.9A, 105m Features General Description Max rDS(on) =105m at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench Max rDS(on) =135m at VGS = -4.5V, ID = -2.5A process that has been especially tailored to minimize the o

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur