Справочник MOSFET. SFB025N100C3

 

SFB025N100C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFB025N100C3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 416 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 147 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для SFB025N100C3

 

 

SFB025N100C3 Datasheet (PDF)

 ..1. Size:1334K  cn scilicon
 sfp028n100c3 sfb025n100c3.pdf

SFB025N100C3 SFB025N100C3

SFP028N100C3,SFB025N100C3N-MOSFET 100V, 2.4m, 120AFeaturesProduct Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on) typ. 2.4m Fast SwitchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and driveDC/DC Converter General Purpose ApplicationsDGSSFP028N100C3 SFB025N100C3Package Marking and Orde

 9.1. Size:1945K  cn scilicon
 sfp024n80c3 sfb021n80c3.pdf

SFB025N100C3 SFB025N100C3

SFP024N80C3,SFB021N80C3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80C3 SFB021N80C3Package Marking and

 9.2. Size:1314K  cn scilicon
 sfp024n80i3 sfb021n80i3.pdf

SFB025N100C3 SFB025N100C3

SFP024N80I3,SFB021N80I3N-MOSFET 80V, 1.9m, 120AProduct SummaryFeaturesVDS Extremely low on-resistance RDS(on) 80V Qualified according to JEDEC criteriaRDS(on) typ. 1.9m Fast switchingID120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive General purpose applicationsDGSSFP024N80I3 SFB021N80I3Package Marking and

 9.3. Size:1951K  cn scilicon
 sfp026n100c3 sfb024n100c3.pdf

SFB025N100C3 SFB025N100C3

SFP026N100C3,SFB024N100C3 N-MOSFET 100V, 2.1m, 210AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 2.1m DS(on) typ. Fast switchingI 210A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Manage

 9.4. Size:7215K  cn scilicon
 sfp030n100c3 sfb027n100c3.pdf

SFB025N100C3 SFB025N100C3

SFP030N100C3, SFB027N100C3 N-MOSFET 100V, 2.5m, 190AProduct SummaryFeature High Speed Power SwitchingVDS100V Enhanced Body diode dv/dt capabilityRDS(on)2.5m Enhanced Avalanche RuggednessID 190A100% DVDS TestedApplication Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested100%

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