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SFP052N80C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFP052N80C3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 188 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 13.1 ns
   Cossⓘ - Выходная емкость: 969 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0049 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для SFP052N80C3

 

 

SFP052N80C3 Datasheet (PDF)

 ..1. Size:687K  cn scilicon
sfp052n80c3 sfb049n80c3.pdf

SFP052N80C3
SFP052N80C3

Enhancement Mode Very Low On-Resistance Fast Switching Motor Control and Drive

 5.1. Size:13503K  cn scilicon
sfp052n80bi3 sfb049n80bi3.pdf

SFP052N80C3
SFP052N80C3

SFP052N80BI3,SFB049N80BI3 N-MOSFET 80V, 4.4m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)4.4m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Light Electric Vehicles100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

 9.1. Size:4375K  cn scilicon
sfp055n100c2 sfb052n100c2.pdf

SFP052N80C3
SFP052N80C3

SFP055N100C2,SFB052N100C2 N-MOSFET 100V, 4.5m, 180AFeatures Product Summary Extremely low on-resistance RDS(on)VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 4.5m Qualified according to JEDEC criteria ID180A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)

 9.2. Size:2847K  cn scilicon
sfp055n85c3 sfb052n85c3.pdf

SFP052N80C3
SFP052N80C3

SFP055N85C3, SFB052N85C3 N-MOSFET 95V, 4.6m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS95V Excellent QgxRDS(on) product(FOM)RDS(on)4.6m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP05

 9.3. Size:6516K  cn scilicon
sfp055n100bc2 sfb052n100bc2.pdf

SFP052N80C3
SFP052N80C3

SFP055N100BC2,SFB052N100BC2 N-MOSFET 100V, 4.0m, 200AFeaturesProduct SummaryVDS100V Enhancement modeRDS(on) typ. 4.0m Very low on-resistance RDS(on) @ VGS=10VID200A Fast Switching and High efficiency 100% Avalanche Tested100% DVDS Tested Pb-free lead plating; RoHS compliant100% Avalanche TestedSFP055N100BC2 SFB052N100BC2Package Marking and

 9.4. Size:5032K  cn scilicon
sfp055n100ac2 sfb052n100ac2.pdf

SFP052N80C3
SFP052N80C3

SFP055N100AC2,SFB052N100AC2 N-MOSFET 100V, 4.5m, 180AFeatures Product Summary Extremely low on-resistance RDS(on)VDS100V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 4.5m Qualified according to JEDEC criteria ID180A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies

 9.5. Size:940K  cn scilicon
sfp053n60c2.pdf

SFP052N80C3
SFP052N80C3

SFP053N60C2 N-MOSFET 60V, 4.3m, 140AFeatures Product Summary Low on resistanceV 60V DS Low gate chargeR 4.3m DS(on) Fast switchingI 140A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter

 9.6. Size:2708K  cn scilicon
sfp055n90c3 sfb052n90c3.pdf

SFP052N80C3
SFP052N80C3

SFP055N90C3, SFB052N90C3 N-MOSFET 97V, 4.6m, 120AFeatures Product Summary Extremely low on-resistance RDS(on)VDS97V Excellent QgxRDS(on) product(FOM)RDS(on)4.6m Qualified according to JEDEC criteria ID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested Battery management

 9.7. Size:8508K  cn scilicon
sfp053n135c3 sfb050n135c3.pdf

SFP052N80C3
SFP052N80C3

SFP053N135C3,SFB050N135C3 N-MOSFET 135V, 4.5m, 175AFeatureProduct Summary High Speed Power Smooth SwitchingVDS135V Enhanced Body diode dv/dt capabilityRDS(on) typ. 4.5m Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedID175A Lead FreeApplication 100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard S

 9.8. Size:10479K  cn scilicon
sfp055n80c2 sfb052n80c2.pdf

SFP052N80C3
SFP052N80C3

SFP055N80C2,SFB052N80C2 N-MOSFET 80V, 4.3m, 140A FEATUREProduct Summary Super high density cell design forVDS80Vextremely low RDS(ON)RDS(on) typ. 4.3m Special designed for E-bike controllerID140A Full RoHS compliance TO-220 TO-263 package design100% DVDS Tested APPLICATIONS100% Avalanche Tested 64V E-bike controller applications

 9.9. Size:1409K  cn scilicon
sfp055n100c3 sfb052n100c3.pdf

SFP052N80C3
SFP052N80C3

SFP055N100C3,SFB052N100C3N-MOSFET 100V, 4.3m, 120AFeatures Product Summary Enhancement ModeVDS100V Very Low On-ResistanceRDS(on)4.3m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

 9.10. Size:667K  cn scilicon
sfp055n95c3.pdf

SFP052N80C3
SFP052N80C3

SFP055N95C3 N-MOSFET 98V, 4.9m, 120AFeatures Product Summary Low on resistanceV 98V DS Low gate chargeR 4.9m DS(on) Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/DC Converter

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