FDT86244 - описание и поиск аналогов

May 2011 FDT86244 N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 m Features General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 A been optimized for rDS(on), switching performance and High performance trench

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET N-Channel Enhancement MOSFET FDT86244 Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3 D 0.250 2.30 (typ) Gauge Plane 1.Gate G D S 2.Drain 0.70 0.1 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter

December 2010 FDT86246 N-Channel Power Trench MOSFET 150 V, 2 A, 236 m Features General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 A been optimized for rDS(on), switching performance and High performance trenc

August 2011 FDT86256 N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 m Features General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin

December 2010 FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 m Features General Description This N-Channel logic Level MOSFETs are produced using Max rDS(on) = 108 m at VGS = 10 V, ID = 3.2 A Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state resistanc

March 2011 FDT86113LZ N-Channel PowerTrench MOSFET 100 V, 3.3 A, 100 m Features General Description This N-Channel logic Level MOSFETs are produced using Max rDS(on) = 100 m at VGS = 10 V, ID = 3.3 A Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 145 m at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state resistance H

November 2010 FDT86102LZ N-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 m Features General Description Max rDS(on) = 28 m at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and switchin

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET N-Channel MOSFET FDT86102LZ Unit mm SOT-223 Features 6.50 0.2 3.00 0.1 VDS (V) = 100V ID =6.6 A(VGS = 20V) 4 RDS(ON) 28m (VGS =10V) RDS(ON) 38m (VGS =4.5V) 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Gate 2.Drain 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage

FDT86113LZ www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET