May 2011FDT86244N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 mFeatures General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 Abeen optimized for rDS(on), switching performance and High performance trench

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel Enhancement MOSFET FDT86244Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3D0.2502.30 (typ)Gauge Plane1.GateG D S 2.Drain0.700.13.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Parameter

December 2010FDT86246N-Channel Power Trench MOSFET 150 V, 2 A, 236 mFeatures General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 Abeen optimized for rDS(on), switching performance and High performance trenc

August 2011FDT86256N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 mFeatures General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin

December 2010FDT86106LZN-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mFeatures General DescriptionThis N-Channel logic Level MOSFETs are produced using Max rDS(on) = 108 m at VGS = 10 V, ID = 3.2 AFairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state resistanc

March 2011FDT86113LZN-Channel PowerTrench MOSFET 100 V, 3.3 A, 100 m Features General DescriptionThis N-Channel logic Level MOSFETs are produced using Max rDS(on) = 100 m at VGS = 10 V, ID = 3.3 AFairchild Semiconductors advanced Power Trench process Max rDS(on) = 145 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state resistance H

November 2010FDT86102LZN-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mFeatures General Description Max rDS(on) = 28 m at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and switchin

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel MOSFETFDT86102LZUnit:mmSOT-223 Features6.500.23.000.1 VDS (V) = 100V ID =6.6 A(VGS = 20V)4 RDS(ON) 28m (VGS =10V) RDS(ON) 38m (VGS =4.5V)1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate 2.Drain3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 ParameterSymbol Rating UnitDrain-Source Voltage

FDT86113LZwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET