JCS10N70F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: JCS10N70F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 42.8 ns
Cossⓘ - Выходная емкость: 154 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
Тип корпуса: TO220F
JCS10N70F Datasheet (PDF)
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N RN-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE
jcs10n70ch jcs10n70fh.pdf
N R N-CHANNEL MOSFET JCS10N70H Package MAIN CHARACTERISTICS 10A I D 700 V VDSS Rdson-max 1.10 @Vgs=10V 38.0nC Qg-typ APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS T O-220C
jcs10n80fc jcs10n80gdc.pdf
N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
jcs10n80f.pdf
N RN-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS RdsonVgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch
jcs10n65f.pdf
R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
jcs10n60f jcs10n60c.pdf
R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES
jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf
N RN-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10VQg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf
N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE
ajcs10n65ct.pdf
N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching
jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf
N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918