FDY1002PZ - описание и поиск аналогов

October 2008 FDY1002PZ Dual P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@VG

2021/8/6 FAIR-S-A0002366002-1.pdf https //rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 1/7 2021/8/6 FAIR-S-A0002366002-1.pdf https //rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 2/7 2021/8/6 FAIR-S-A0002366002-1.pdf https //rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u

January 2006 FDY100PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 350 mA, 20 V RDS(ON) = 1.2 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 1.6 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

January 2006 FDY101PZ Single P-Channel ( 2.5V) Specified PowerTrench MOSFET General Description Features This Single P-Channel MOSFET has been designed 150 mA, 20 V RDS(ON) = 8 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 12 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD pro

February 2010 FDY102PZ tm Single P-Channel ( 1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max rDS(on) = 0.5 at VGS = 4.5 V, ID = 0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 0.7 at VGS = 2.5 V, ID = 0.70 A optimize the rDS(on)@