FDY300NZ - параметры транзистора MOSFET, его аналоги, datasheet

FDY300NZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: FDY300NZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
   Тип корпуса: SOT523F

Аналог (замена) для FDY300NZ

FDY300NZ Datasheet (PDF)

..1. Size:266K fairchild semi
fdy300nz.pdf

January 2007January 2007tmFDY300NZSingle N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 Vusing Fairchild Semiconductors advanced PowerRDS(ON) = 850 m @ VGS = 2.5 VTrench process to optimize the RDS(ON) @ VGS = 2.5v.Applications E

8.1. Size:373K fairchild semi
fdy3000nz.pdf

January 2007January 2007tmFDY3000NZDual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 850 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v.Applications ESD protect

8.2. Size:453K onsemi
fdy3000nz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:222K fairchild semi
fdy301nz.pdf

January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V using Fairchild Semiconductors advanced Power RDS(ON) = 7 @ VGS = 2.5 V Trench process to optimize the RDS(ON) @ VGS = 2.5v. Applications ESD protection

9.2. Size:213K fairchild semi
fdy302nz.pdf

July 2006 FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis Single N-Channel MOSFET has been designed 600 mA, 20 V RDS(ON) = 300 m @ VGS = 4.5 V using Fairchild Semiconductors advanced PowerRDS(ON) = 500 m @ VGS = 2.5 V Trench process to optimize the RDS(ON) @VGS =2.5V. Applications ESD protection diode (n

9.3. Size:303K onsemi
fdy301nz.pdf