JCS7N70F
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: JCS7N70F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 31
nC
trⓘ -
Время нарастания: 35
ns
Cossⓘ - Выходная емкость: 125
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6
Ohm
Тип корпуса:
TO220F
Аналог (замена) для JCS7N70F
JCS7N70F
Datasheet (PDF)
..1. Size:1944K jilin sino
jcs7n70v jcs7n70r jcs7n70c jcs7n70f jcs7n70s jcs7n70b.pdf 
N RN-CHANNEL MOSFET JCS7N70C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR
0.1. Size:1228K jilin sino
jcs7n70fe.pdf 
N RN-CHANNEL MOSFET JCS7N70FE Package MAIN CHARACTERISTICS ID 7.0 A VDSS 700 V Rdson-max(@Vgs=10V) 1.35 Qg-typ 25.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
9.1. Size:755K jilin sino
jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf 
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N60 \ Package ;NSpe MAIN CHARACTERISTICS ID 7.0 A 600 V VDSS 1.2 &! Rdson@Vgs=10V54 nC Qg APPLICATIONS (u High efficiency switch
9.2. Size:887K jilin sino
jcs7n120aba jcs7n120wa.pdf 
N RN-CHANNEL MOSFET JCS7N120A MAIN CHARACTERISTICS Package ID 7 A VDSS 1200 V RdsonVgs=10V 1.5 -MAX Qg-Typ 61.13 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power supp
9.3. Size:1165K jilin sino
jcs7n80fh jcs7n80ch jcs7n80bh jcs7n80sh.pdf 
N RN-CHANNEL MOSFET JCS7N80H Package MAIN CHARACTERISTICS ID 7A VDSS 800V Rdson-max 1.6 Vgs=10V Qg-Typ 39nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED po
9.4. Size:600K jilin sino
jcs7n65.pdf 
N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS7N65B ;NSpe MAIN CHARACTERISTICS \ Package ID 7.0 A 650 V VDSS 1.3 &! Rdson@Vgs=10V25 nC Qg APPLICATIONS (u High efficiency switch
9.5. Size:904K jilin sino
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf 
N RN-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
9.6. Size:1105K jilin sino
jcs7n95fa jcs7n95ca jcs7n95sa jcs7n95aba.pdf 
N RN-CHANNEL MOSFET JCS7N95A Package MAIN CHARACTERISTICS 7A ID 950 V VDSS Rdson-Max 1.5 @Vgs=10VQg-typ 42.48nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge
9.7. Size:1774K jilin sino
jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf 
N RN-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max1.0 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
9.8. Size:757K jilin sino
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf 
N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
9.10. Size:667K jilin sino
jcs7n80fc.pdf 
N R N-CHANNEL MOSFET JCS7N80C Package MAIN CHARACTERISTICS 7A ID 800 V VDSS Rdson-max 1.8 @Vgs=10VQg-typ 32nC APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate charge
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