FDZ1905PZ - параметры транзистора MOSFET, его аналоги, datasheet

FDZ1905PZ Datasheet (PDF)

..1. Size:292K fairchild semi
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July 2008FDZ1905PZtmCommon Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET 20V, 3A, 123mFeatures General DescriptionThis device is designed specifically as a single package solution Max rS1S2(on) = 126m at VGS = 4.5V, IS1S2 = 1Afor the battery charge switch in cellular handset and other Max rS1S2(on) = 141m at VGS = 2.5V, IS1S2 = 1Aultra-portab

..2. Size:318K onsemi
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MOSFET P-Channel,POWERTRENCH), CommonDrain: 1.5 V, WLCSP-20 V, -3 A, 126 mWFDZ1905PZwww.onsemi.comGeneral DescriptionThis device is designed specifically as a single package solution forS1the battery charge switch in cellular handset and other ultra-portableapplications. It features two common drain P-channel MOSFETs,which enables bidirectional current flow, on ON Semi

9.1. Size:248K fairchild semi
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June 2009FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET -20V, -1A, 85m Features General DescriptionDesigned on Fairchild's advanced 1.5V PowerTrench process Max rDS(on) = 85m at VGS = -4.5V, ID = -1Awith state of the art "low pitch" WLCSP packaging process, the Max rDS(on) = 123m at VGS = -2.5V, ID = -1AFDZ191P minimizes both PCB space and rDS(on). This advanced WL

9.2. Size:303K fairchild semi
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January 2010FDZ192NZN-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET 20 V, 5.3 A, 39 mFeatures General Description Max rDS(on) = 39 m at VGS = 4.5 V, ID = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" WLCSP packaging process, the Max rDS(on) = 43 m at VGS = 2.5 V, ID = 2.0 AFDZ192NZ minimizes both PCB sp