Справочник MOSFET. MS65R600R

 

MS65R600R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MS65R600R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.6 nC
   trⓘ - Время нарастания: 33.8 ns
   Cossⓘ - Выходная емкость: 27.5 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для MS65R600R

 

 

MS65R600R Datasheet (PDF)

 ..1. Size:863K  jilin sino
 ms65r600f ms65r600r.pdf

MS65R600R MS65R600R

N R N-CHANNEL MOSFET MS65R600 Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 600m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 8.1. Size:887K  jilin sino
 ms65r620rf ms65r620rr.pdf

MS65R600R MS65R600R

N RN-CHANNEL MOSFET MS65R620R Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 620m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.1. Size:994K  jilin sino
 ms65r120f ms65r120ge ms65r120c ms65r120s.pdf

MS65R600R MS65R600R

N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.2. Size:1099K  jilin sino
 ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf

MS65R600R MS65R600R

N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.3. Size:973K  jilin sino
 ms65r190rf1 ms65r190rge.pdf

MS65R600R MS65R600R

N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.4. Size:913K  jilin sino
 ms65r400rf ms65r400rr.pdf

MS65R600R MS65R600R

N N-CHANNEL MOSFET RMS65R400R Package MAIN CHARACTERISTICS ID 11A VDSS 650 V Rdson-max 0.45 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.5. Size:837K  jilin sino
 ms65r135r.pdf

MS65R600R MS65R600R

N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 9.6. Size:1088K  jilin sino
 ms65r360f ms65r360r ms65r360c.pdf

MS65R600R MS65R600R

N RN-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS Package ID 11A VDSS 650 V Rdson-max 0.40 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

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