MS65R600R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MS65R600R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 79 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14.6 nC
Время нарастания (tr): 33.8 ns
Выходная емкость (Cd): 27.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
Тип корпуса: DPAK
MS65R600R Datasheet (PDF)
ms65r600f ms65r600r.pdf
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N R N-CHANNEL MOSFET MS65R600 Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 600m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r620rf ms65r620rr.pdf
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N RN-CHANNEL MOSFET MS65R620R Package MAIN CHARACTERISTICS ID 7A VDSS 650 V Rdson-max 620m (@Vgs=10V Qg-typ 14.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf
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N RN-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r170f ms65r170c ms65r170b ms65r170s ms65r170ge.pdf
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N RN-CHANNEL MOSFET MS65R170 Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.180 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r190rf1 ms65r190rge.pdf
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N RN-CHANNEL MOSFET MS65R190R Package MAIN CHARACTERISTICS ID 20A VDSS 650 V Rdson-max 0.190 @Vgs=10V Qg-typ 44.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r400rf ms65r400rr.pdf
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N N-CHANNEL MOSFET RMS65R400R Package MAIN CHARACTERISTICS ID 11A VDSS 650 V Rdson-max 0.45 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r135r.pdf
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N RN-CHANNEL MOSFET MS65R135R Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.135 @Vgs=10V Qg-typ 60.2 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
ms65r360f ms65r360r ms65r360c.pdf
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N RN-CHANNEL MOSFET MS65R360 MAIN CHARACTERISTICS Package ID 11A VDSS 650 V Rdson-max 0.40 @Vgs=10V Qg-typ 22 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
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