Справочник MOSFET. NCE0102Z

 

NCE0102Z Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0102Z
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: TO-92
 

 Аналог (замена) для NCE0102Z

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0102Z Datasheet (PDF)

 ..1. Size:303K  ncepower
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NCE0102Z

Pb Free Producthttp://www.ncepower.com NCE0102ZNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 7.1. Size:621K  ncepower
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NCE0102Z

NCE0102Ehttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0102E uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 2ADS DR

 7.2. Size:287K  ncepower
nce0102m.pdfpdf_icon

NCE0102Z

Pb Free Producthttp://www.ncepower.com NCE0102MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 7.3. Size:312K  ncepower
nce0102a.pdfpdf_icon

NCE0102Z

http://www.ncepower.com NCE0102ANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0102A uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)

Другие MOSFET... MT6JN009A , 2SK2049 , A2N7002K , BSS123K , NCE0102A , NCE0102B , NCE0102E , NCE0102M , IRFP064N , NCE0103 , NCE0104AN , NCE0104S , NCE0105M , NCE0106AR , NCE0107AK , NCE0115AK , NCE0117AK .

History: IRF6619 | TPC8301 | 3N70L-TF3-T | RJK5026DPE | DMG6301UDW

 

 
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