NCE0157A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE0157A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 57 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 182.5 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
Тип корпуса: TO220
Аналог (замена) для NCE0157A
NCE0157A Datasheet (PDF)
nce0157a.pdf

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR
nce0157a2d.pdf

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR
nce0157ak.pdf

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)
nce0157a2.pdf

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)
Другие MOSFET... NCE0107AK , NCE0115AK , NCE0117AK , NCE011N30GU , NCE0130GA , NCE0140AK2 , NCE0140I2 , NCE0140IA , IRFP260N , NCE0157A2D , NCE0157AK , NCE0157G , NCE0159 , NCE0160AG , NCE0160G , NCE01H13D , NCE01NP03S .
History: CJP85N80 | BSC042NE7NS3G | 2N5902 | STP4NK60ZFP | BL4N80A-U | RTR030P02FHA | SM32314D1RL
History: CJP85N80 | BSC042NE7NS3G | 2N5902 | STP4NK60ZFP | BL4N80A-U | RTR030P02FHA | SM32314D1RL



Список транзисторов
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