Справочник MOSFET. NCE0157A

 

NCE0157A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0157A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 57 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 182.5 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE0157A

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0157A Datasheet (PDF)

 ..1. Size:655K  ncepower
nce0157a.pdfpdf_icon

NCE0157A

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 0.1. Size:631K  ncepower
nce0157a2d.pdfpdf_icon

NCE0157A

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 0.2. Size:436K  ncepower
nce0157ak.pdfpdf_icon

NCE0157A

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 0.3. Size:335K  ncepower
nce0157a2.pdfpdf_icon

NCE0157A

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

Другие MOSFET... NCE0107AK , NCE0115AK , NCE0117AK , NCE011N30GU , NCE0130GA , NCE0140AK2 , NCE0140I2 , NCE0140IA , IRFP260N , NCE0157A2D , NCE0157AK , NCE0157G , NCE0159 , NCE0160AG , NCE0160G , NCE01H13D , NCE01NP03S .

History: CJP85N80 | BSC042NE7NS3G | 2N5902 | STP4NK60ZFP | BL4N80A-U | RTR030P02FHA | SM32314D1RL

 

 
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