Справочник MOSFET. NCE0159

 

NCE0159 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0159
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 59 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE0159

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0159 Datasheet (PDF)

 ..1. Size:380K  ncepower
nce0159.pdfpdf_icon

NCE0159

Pb Free Producthttp://www.ncepower.com NCE0159NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0159 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =59A RDS(ON)

 8.1. Size:701K  ncepower
nce0157g.pdfpdf_icon

NCE0159

http://www.ncepower.comNCE0157GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =100V,I =57ADS(ON) DS Dused in a wide variety of applications. R

 8.2. Size:374K  ncepower
nce0157.pdfpdf_icon

NCE0159

Pb Free Producthttp://www.ncepower.com NCE0157NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 8.3. Size:631K  ncepower
nce0157a2d.pdfpdf_icon

NCE0159

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

Другие MOSFET... NCE0130GA , NCE0140AK2 , NCE0140I2 , NCE0140IA , NCE0157A , NCE0157A2D , NCE0157AK , NCE0157G , IRF3710 , NCE0160AG , NCE0160G , NCE01H13D , NCE01NP03S , NCE01P05S , NCE01P13 , NCE01P13I , NCE01P18 .

History: CHM4435AZGP | MTN7451Q8 | PE506BA | BUK7Y3R5-40H | 2SK2376 | TPCA8102 | IXTJ36N20

 

 
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