NCE0160AG. Аналоги и основные параметры
Наименование производителя: NCE0160AG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 173.7 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCE0160AG
- подборⓘ MOSFET транзистора по параметрам
NCE0160AG даташит
nce0160ag.pdf
http //www.ncepower.com NCE0160AG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =60A RDS(ON)
nce0160g.pdf
Pb Free Product http //www.ncepower.com NCE0160G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)
nce0117k.pdf
NCE0117K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce01h13.pdf
Pb Free Product NCE01H13 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)
nce0130ka.pdf
NCE0130KA http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A Schematic diagram RDS(ON)
nce0125ai.pdf
Pb Free Product http //www.ncepower.com NCE0125AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0125AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =25A RDS(ON)
nce0117.pdf
Pb Free Product http //www.ncepower.com NCE0117 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce0102e.pdf
NCE0102E http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102E uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 2A DS D R
nce0110ak.pdf
Pb Free Product http //www.ncepower.com NCE0110AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)
nce01p30k.pdf
http //www.ncepower.com NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-30A Schematic diagram DS D R
nce0159.pdf
Pb Free Product http //www.ncepower.com NCE0159 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0159 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =59A RDS(ON)
nce0157g.pdf
http //www.ncepower.com NCE0157G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157G uses advanced trench technology and design General Features to provide excellent R with low gate charge. It can be V =100V,I =57A DS(ON) DS D used in a wide variety of applications. R
nce0102m.pdf
Pb Free Product http //www.ncepower.com NCE0102M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
nce0102z.pdf
Pb Free Product http //www.ncepower.com NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
nce01h21t.pdf
Pb Free Product http //www.ncepower.com NCE01H21T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)
nce0140k2.pdf
Pb Free Product http //www.ncepower.com NCE0140K2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
nce0110k.pdf
Pb Free Product http //www.ncepower.com NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON)
nce0117ak.pdf
NCE0117AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =17A DS D R
nce0106ar.pdf
http //www.ncepower.com NCE0106AR NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A RDS(ON)
nce011n30gu.pdf
NCE011N30GU http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE011N30GU uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =325A DS(ON) DS D be used in a wide variety of applications. R =0.75m (typical) @ V =10V DS(ON) GS R =1.5m (typical) @ V =4.5V Application DS(ON) GS
nce0104s.pdf
http //www.ncepower.com NCE0104S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =100V,I =4A DS D R
nce0108as.pdf
Pb Free Product NCE0108AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)
nce01p18l.pdf
http //www.ncepower.com NCE01P18L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
nce01p18d.pdf
http //www.ncepower.com NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)
nce01p03s.pdf
Pb Free Product http //www.ncepower.com NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-3A Schematic diagram RDS(ON)
nce0117k.pdf
Pb Free Product http //www.ncepower.com NCE0117K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)
nce01p05s.pdf
http //www.ncepower.com NCE01P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-5A Schematic diagram RDS(ON)
nce0105m.pdf
http //www.ncepower.com NCE0105M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0105M uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I = 5A DS D R
nce0103.pdf
Pb Free Product http //www.ncepower.com NCE0103 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)
nce0103y.pdf
Pb Free Product http //www.ncepower.com NCE0103Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)
nce0102a.pdf
http //www.ncepower.com NCE0102A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0102A uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)
nce0157.pdf
Pb Free Product http //www.ncepower.com NCE0157 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)
nce01nd03s.pdf
NCE01ND03S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01ND03S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. Schematic diagram General Features V =100V,I =3A DS D R
nce0102.pdf
Pb Free Product http //www.ncepower.com NCE0102 NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
nce01p18.pdf
http //www.ncepower.com NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-18A Schematic diagram DS D R
nce0115ak.pdf
http //www.ncepower.com NCE0115AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)
nce0157a2d.pdf
Pb Free Product http //www.ncepower.com NCE0157A2D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2D uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =57A DS D R
nce01p13i.pdf
http //www.ncepower.com NCE01P13I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13I uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. It is ESD protested. General Features V =-100V,I =-13A Schematic diagram DS D R
nce0110as.pdf
Pb Free Product NCE0110AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)
nce0157a.pdf
Pb Free Product http //www.ncepower.com NCE0157A2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =57A DS D R
nce0107ak.pdf
Pb Free Product http //www.ncepower.com NCE0107AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 7A Schematic diagram RDS(ON)
nce01h13d.pdf
NCE01H13D http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)
nce0130ga.pdf
http //www.ncepower.com NCE0130GA NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE0130GA uses advanced trench technology and VDS = 100V,ID =30A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce0157d.pdf
Pb Free Product http //www.ncepower.com NCE0157D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)
nce0117i.pdf
NCE0117I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)
nce01np03s.pdf
Pb Free Product NCE01NP03S http //www.ncepower.com NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE01NP03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features Schematic diagram N-channel P-channel VDS = 100V,ID = 3A VDS = -100
nce01p30i.pdf
http //www.ncepower.com NCE01P30I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
nce0104an.pdf
http //www.ncepower.com NCE0104AN NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=100V,ID=4A Schematic diagram RDS(ON)
nce01p18k.pdf
Pb Free Product http //www.ncepower.com NCE01P18K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)
nce0102b.pdf
http //www.ncepower.com NCE0102B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S VDS = 100V,ID = 1.8A RDS(ON)
nce0106r.pdf
Pb Free Product http //www.ncepower.com NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON)
nce0157ak.pdf
Pb Free Product http //www.ncepower.com NCE0157AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)
nce01p30l.pdf
http //www.ncepower.com NCE01P30L NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
nce01h11.pdf
Pb Free Product http //www.ncepower.com NCE01H11 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)
nce0140i2.pdf
http //www.ncepower.com NCE0140I2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140I2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =40A DS D R
nce01p35k.pdf
http //www.ncepower.com NCE01P35K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P35K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-100V,I =-35A Schematic diagram DS D R
nce0157a2.pdf
Pb Free Product http //www.ncepower.com NCE0157A2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)
nce01p13.pdf
NCE01P13 http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
nce01h10.pdf
Pb Free Product http //www.ncepower.com NCE01H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)
nce0140ak2.pdf
NCE0140AK2 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140AK2 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 100V,I =40A Schematic diagram DS D R
nce01h10d.pdf
Pb Free Product http //www.ncepower.com NCE01H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)
nce0130a.pdf
NCE0130A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A Schematic diagram RDS(ON)
nce01p30d.pdf
http //www.ncepower.com NCE01P30D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)
nce01p13k.pdf
Pb Free Product http //www.ncepower.com NCE01P13K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)
nce0106z.pdf
Pb Free Product http //www.ncepower.com NCE0106Z NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0106Z uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 100V,ID = 6A RDS(ON)
nce0117.pdf
NCE0117 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI
nce0108as.pdf
NCE0108AS www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS S
Другие IGBT... NCE0140AK2, NCE0140I2, NCE0140IA, NCE0157A, NCE0157A2D, NCE0157AK, NCE0157G, NCE0159, IRFB4227, NCE0160G, NCE01H13D, NCE01NP03S, NCE01P05S, NCE01P13, NCE01P13I, NCE01P18, NCE01P18L
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