Справочник MOSFET. NCE0270T

 

NCE0270T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0270T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 320 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 105 ns
   Cossⓘ - Выходная емкость: 262 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для NCE0270T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0270T Datasheet (PDF)

 ..1. Size:735K  ncepower
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NCE0270T

http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR

 8.1. Size:332K  ncepower
nce0275t.pdfpdf_icon

NCE0270T

Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 8.2. Size:657K  ncepower
nce0275d.pdfpdf_icon

NCE0270T

http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

 8.3. Size:653K  ncepower
nce0275.pdfpdf_icon

NCE0270T

http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

Другие MOSFET... NCE0224A , NCE0224AF , NCE0224AK , NCE0224DA , NCE0224F , NCE0250D , NCE0260P , NCE0260T , IRFB3607 , NCE0275 , NCE0275D , NCE02P20K , NCE035P40GU , NCE1012E , NCE1013E , NCE1102N , NCE1205 .

History: IXFH21N50F | SUP18N15-95 | SDF10N60

 

 
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