Справочник MOSFET. NCE0270T

 

NCE0270T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE0270T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 320 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 105 ns
   Cossⓘ - Выходная емкость: 262 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
   Тип корпуса: TO247

 Аналог (замена) для NCE0270T

 

 

NCE0270T Datasheet (PDF)

 ..1. Size:735K  ncepower
 nce0270t.pdf

NCE0270T NCE0270T

http://www.ncepower.comNCE0270TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0270T uses advanced trench technology and designto provide excellent R with low gate charge. It can beDS(ON)used in a wide variety of applications.General Features V =200V,I =70ADS DR

 8.1. Size:332K  ncepower
 nce0275t.pdf

NCE0270T NCE0270T

Pb Free Producthttp://www.ncepower.com NCE0275TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 8.2. Size:657K  ncepower
 nce0275d.pdf

NCE0270T NCE0270T

http://www.ncepower.comNCE0275DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275D uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

 8.3. Size:653K  ncepower
 nce0275.pdf

NCE0270T NCE0270T

http://www.ncepower.comNCE0275NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0275 uses advanced trench technology and design toprovide excellent R with low gate charge. It can be used inDS(ON)automotive applications and a wide variety of otherapplications.General Features V =200V,I =75A Schematic diagramDSS DR

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