NCE15P30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE15P30
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 124 nC
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 117 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.095 Ohm
Тип корпуса: TO220
NCE15P30 Datasheet (PDF)
nce15p30.pdf
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http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR
nce15p30k.pdf
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http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR
nce15p25j.pdf
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http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce15p25i.pdf
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http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)
nce15p25jk.pdf
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NCE15P25JK http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
nce15p25ji.pdf
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http://www.ncepower.com NCE15P25JI NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)
nce15p25.pdf
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http://www.ncepower.com NCE15P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![NCE15P30](https://alltransistors.com/images/us.png)
![NCE15P30](https://alltransistors.com/images/es.png)
![NCE15P30](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C