Справочник MOSFET. NCE15P30

 

NCE15P30 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE15P30
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 117 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE15P30

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE15P30 Datasheet (PDF)

 ..1. Size:770K  ncepower
nce15p30.pdfpdf_icon

NCE15P30

http://www.ncepower.comNCE15P30NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

 0.1. Size:796K  ncepower
nce15p30k.pdfpdf_icon

NCE15P30

http://www.ncepower.comNCE15P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-150V,I =-30A Schematic diagramDS DR

 8.1. Size:532K  ncepower
nce15p25j.pdfpdf_icon

NCE15P30

http://www.ncepower.com NCE15P25J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features V =-150V,I =-25A Schematic diagram DS DRDS(ON)

 8.2. Size:527K  ncepower
nce15p25i.pdfpdf_icon

NCE15P30

http://www.ncepower.com NCE15P25I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =-150V,I =-25A DS DSchematic diagram RDS(ON)

Другие MOSFET... NCE1550F , NCE15H10 , NCE15H10A , NCE15P25 , NCE15P25I , NCE15P25J , NCE15P25JI , NCE15P25JK , IRFB31N20D , NCE15P30K , NCE1608N , NCE16P07J , NCE16P40Q , NCE1805S , NCE1810AK , NCE1826K , NCE2004Y .

History: PJM2309PSA | H7N0308CF | OSG65R290FEF | FL6L5207

 

 
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