NCE2030U. Аналоги и основные параметры
Наименование производителя: NCE2030U
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9.2 ns
Cossⓘ - Выходная емкость: 162 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: TO-262
Аналог (замена) для NCE2030U
- подборⓘ MOSFET транзистора по параметрам
NCE2030U даташит
nce2030u.pdf
http //www.ncepower.com NCE2030U NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2030U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
nce2030k.pdf
Pb Free Product http //www.ncepower.com NCE2030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
nce2012.pdf
Pb Free Product http //www.ncepower.com NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)
nce20p05y.pdf
http //www.ncepower.com NCE20P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P05Y uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -5A DS D R
nce2025i.pdf
Pb Free Product http //www.ncepower.com NCE2025I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =25A RDS(ON)
nce20pd05.pdf
http //www.ncepower.com NCE20PD05 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5
nce20p10j.pdf
http //www.ncepower.com NCE20P10J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P10J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -
nce20nd15q.pdf
NCE20ND15Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND15Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications.It is ESD protected. General Features V =20V,I =15A DS D R = 3.6m @ V =4.5V DS(ON) GS Schematic diagram R = 3.7m @ V =4V DS
nce20p85gu.pdf
http //www.ncepower.com NCE20P85GU NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE20P85GU uses advanced trench technology and VDS =-20V,ID =-85A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce20np1006s.pdf
http //www.ncepower.com NCE20NP1006S N and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS = 20V,ID
nce20p08j.pdf
http //www.ncepower.com NCE20P08J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P08J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -
nce2025s.pdf
Pb Free Product http //www.ncepower.com NCE2025S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =25A Schematic diagram RDS(ON)
nce20p09s.pdf
http //www.ncepower.com NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE20P09S uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -9A D
nce2008e.pdf
Pb Free Product http //www.ncepower.com NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
nce2007n.pdf
Pb Free Product http //www.ncepower.com NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Ge
nce2003.pdf
Pb Free Product http //www.ncepower.com NCE2003 N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =
nce2090k.pdf
Pb Free Product http //www.ncepower.com NCE2090K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =90A Schematic diagram RDS(ON)
nce2010e.pdf
Pb Free Product http //www.ncepower.com NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
nce20p05j.pdf
http //www.ncepower.com NCE20P05J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P05J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -
nce20nd07u.pdf
http //www.ncepower.com NCE20ND07U NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 20V,I =7A DS D The NCE20ND07U uses advanced trench technology and design R
nce2013j.pdf
http //www.ncepower.com NCE2013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features Schematic diagram V = 20V,I = 13A DS D R
nce20th60bf.pdf
PbFreeProduct NCE20TH60BF 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s
nce20nd06.pdf
Pb Free Product http //www.ncepower.com NCE20ND06 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features V
nce2060k.pdf
Pb Free Product NCE2060K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
nce2006y.pdf
http //www.ncepower.com NCE2006Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON)
nce20td65bd.pdf
Pb Free Product NCE20TD65B 650V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce20td60bp.pdf
PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce20nd08u.pdf
NCE20ND08U http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE20ND08U uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =20V,I =12A DS D R
nce2014es.pdf
Pb Free Product http //www.ncepower.com NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)
nce20td60bt.pdf
PbFreeProduct NCE20TD60BT, NCE20TD60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce2006ne.pdf
NCE2006NE http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006NE uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS D
nce20td60b.pdf
Pb Free Product NCE20TD60B 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
nce2004y.pdf
NCE2004Y http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =4A RDS(ON)
nce20p70g.pdf
Pb Free Product http //www.ncepower.com NCE20P70G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)
nce20th60bp.pdf
PbFreeProduct NCE20TH60BP 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed s
nce20p45q.pdf
Pb Free Product http //www.ncepower.com NCE20P45Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-19V,ID =-45A Schematic diagram RDS(ON)
nce20td60bd.pdf
Pb Free Product NCE20TD60BD 600V, 20A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching
nce20p07n.pdf
http //www.ncepower.com NCE20P07N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =
nce2007ns.pdf
http //www.ncepower.com NCE2007NS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A
Другие IGBT... NCE1826K, NCE2004Y, NCE2006Y, NCE2012, NCE2013J, NCE2014ES, NCE2025I, NCE2025S, IRLB3034, NCE2090K, NCE20NP1006S, NCE20P05J, NCE20P05Y, NCE20P07N, NCE20P08J, NCE20P09S, NCE20P10J
History: DMN3067LW | MM9N090P | SPP80N05 | MMP7401 | RSJ250P10
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