NCE20P09S - описание и поиск аналогов

http //www.ncepower.com NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE20P09S uses advanced trench technology to provide G1 G2 excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a S1 S2 load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -9A D

http //www.ncepower.com NCE20P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P05Y uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features V = -20V,I = -5A DS D R

http //www.ncepower.com NCE20P08J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P08J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -

http //www.ncepower.com NCE20P05J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE20P05J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram V = -20V,I = -

http //www.ncepower.com NCE20P07N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =