Справочник MOSFET. NCE20P10J

 

NCE20P10J MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE20P10J
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 680 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: DFN2X2-6L

 Аналог (замена) для NCE20P10J

 

 

NCE20P10J Datasheet (PDF)

 ..1. Size:637K  ncepower
 nce20p10j.pdf

NCE20P10J NCE20P10J

http://www.ncepower.comNCE20P10JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P10J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

 8.1. Size:603K  ncepower
 nce20p05y.pdf

NCE20P10J NCE20P10J

http://www.ncepower.comNCE20P05YNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE20P05Y uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -5ADS DR

 8.2. Size:311K  ncepower
 nce20pd05.pdf

NCE20P10J NCE20P10J

http://www.ncepower.com NCE20PD05NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20PD05 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = -20V,ID =- 5

 8.3. Size:282K  ncepower
 nce20p85gu.pdf

NCE20P10J NCE20P10J

http://www.ncepower.com NCE20P85GUNCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE20P85GU uses advanced trench technology and VDS =-20V,ID =-85A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 8.4. Size:721K  ncepower
 nce20p08j.pdf

NCE20P10J NCE20P10J

http://www.ncepower.comNCE20P08JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P08J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

 8.5. Size:695K  ncepower
 nce20p09s.pdf

NCE20P10J NCE20P10J

http://www.ncepower.comNCE20P09SNCE P-Channel Enhancement Mode Power MOSFETD1D2DescriptionThe NCE20P09S uses advanced trench technology to provideG1 G2excellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aS1 S2load switch or in PWM applications.Schematic diagramGeneral Features V = -20V,I = -9AD

 8.6. Size:732K  ncepower
 nce20p05j.pdf

NCE20P10J NCE20P10J

http://www.ncepower.comNCE20P05JNCE P-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE20P05J uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SGeneral FeaturesSchematic diagram V = -20V,I = -

 8.7. Size:361K  ncepower
 nce20p70g.pdf

NCE20P10J NCE20P10J

Pb Free Producthttp://www.ncepower.com NCE20P70GNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-70A Schematic diagram RDS(ON)

 8.8. Size:304K  ncepower
 nce20p45q.pdf

NCE20P10J NCE20P10J

Pb Free Producthttp://www.ncepower.com NCE20P45QNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-19V,ID =-45A Schematic diagram RDS(ON)

 8.9. Size:277K  ncepower
 nce20p07n.pdf

NCE20P10J NCE20P10J

http://www.ncepower.com NCE20P07NNCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = -20V,ID =

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