Справочник MOSFET. NCE3008N

 

NCE3008N Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE3008N
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 109.4 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: SOT23-6L
 

 Аналог (замена) для NCE3008N

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE3008N Datasheet (PDF)

 ..1. Size:333K  ncepower
nce3008n.pdfpdf_icon

NCE3008N

http://www.ncepower.com NCE3008NNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008N uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 7.1. Size:268K  ncepower
nce3008m.pdfpdf_icon

NCE3008N

Pb Free Producthttp://www.ncepower.com NCE3008MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE3008M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic diagram General Feature

 7.2. Size:308K  ncepower
nce3008y.pdfpdf_icon

NCE3008N

http://www.ncepower.com NCE3008YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature VDS =30V,ID =8A RDS(ON)

 7.3. Size:631K  ncepower
nce3008xm.pdfpdf_icon

NCE3008N

http://www.ncepower.comNCE3008XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3008XM uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aGBattery protection or in other Switching application.SGeneral Features V = 30V,I = 8A Schematic diagram

Другие MOSFET... NCE2301F , NCE2302B , NCE2302C , NCE2308X , NCE2312X , NCE2321 , NCE2321A , NCE2323 , IRFZ44 , NCE3008XM , NCE3008Y , NCE3009S , NCE3013J , NCE3015S , NCE3025G , NCE3030K , NCE3030Q .

History: KIA2N60H-252 | WMQ37N03T1 | HRS88N08K

 

 
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