Справочник MOSFET. NCE3045G

 

NCE3045G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE3045G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для NCE3045G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE3045G Datasheet (PDF)

 ..1. Size:655K  ncepower
nce3045g.pdfpdf_icon

NCE3045G

http://www.ncepower.comNCE3045GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3045G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =45ADS(ON) DS Dused in a wide variety of applications. R =6.9m (typical) @ V =10VDS(ON) GSR =11.6m (typical) @ V =4.5VApplication DS(ON) GS DC

 8.1. Size:633K  ncepower
nce3040q.pdfpdf_icon

NCE3045G

http://www.ncepower.comNCE3040QNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE3040Q uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =30V,I =40ADS(ON) DS Dused in a wide variety of applications. R =5.7m (typical) @ V =10VDS(ON) GSR =10.0m (typical) @ V =4.5VApplication DS(ON) GS DC

 9.1. Size:331K  ncepower
nce30h10g.pdfpdf_icon

NCE3045G

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

 9.2. Size:388K  ncepower
nce3018as.pdfpdf_icon

NCE3045G

Pb Free Producthttp://www.ncepower.com NCE3018ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3018AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =18A Schematic diagram RDS(ON)

Другие MOSFET... NCE3008Y , NCE3009S , NCE3013J , NCE3015S , NCE3025G , NCE3030K , NCE3030Q , NCE3040Q , IRFB4227 , NCE3050I , NCE3050KA , NCE3055 , NCE3065G , NCE3065Q , NCE3080I , NCE3080L , NCE3085K .

History: HSO8810 | NCEP40T15A | KNH2910A | KHB9D5N20F | WST2N7002K | HPW750N20SPA | NCE65T680D

 

 
Back to Top

 


 
.