NCE30H33LL - параметры транзистора MOSFET, его аналоги, datasheet

NCE30H33LL Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: NCE30H33LL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 320 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 330 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 200 ns
   Cossⓘ - Выходная емкость: 1672 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TOLL

Аналог (замена) для NCE30H33LL

- подбор MOSFET транзистора по параметрам

NCE30H33LL Datasheet (PDF)

..1. Size:643K ncepower
nce30h33ll.pdf pdf_icon

http://www.ncepower.com NCE30H33LLNCE N-Channel Enhancement Mode Power MOSFETGeneral FeaturesDescription V =30V ,I =330ADS DThe NCE30H33LL uses advanced trench technology andR

8.1. Size:331K ncepower
nce30h10g.pdf pdf_icon

http://www.ncepower.com NCE30H10GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/

8.2. Size:754K ncepower
nce30h15bg.pdf pdf_icon

http://www.ncepower.com NCE30H15BGNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =150ADS DDescriptionR

8.3. Size:417K ncepower
nce30h14k.pdf pdf_icon

http://www.ncepower.com NCE30H14KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =140A RDS(ON)

8.4. Size:352K ncepower
nce30h12.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H12NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

8.5. Size:441K ncepower
nce30h15k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H15KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

8.6. Size:416K ncepower
nce30h29d.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V ,ID =290A Schematic diagram RDS(ON)

8.7. Size:391K ncepower
nce30h11bk.pdf pdf_icon

NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

8.8. Size:681K ncepower
nce30h10bk.pdf pdf_icon

http://www.ncepower.com NCE30H10BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H10BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR

8.9. Size:723K ncepower
nce30h15b.pdf pdf_icon

Pb Free Producthttp://www.ncepower.comNCE30H15BNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15B uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

8.10. Size:721K ncepower
nce30h12ak.pdf pdf_icon

http://www.ncepower.comNCE30H12AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H12AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =120ADS DR

8.11. Size:373K ncepower
nce30h10.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

8.12. Size:632K ncepower
nce30h11bg.pdf pdf_icon

http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen

8.13. Size:395K ncepower
nce30h10k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H10KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

8.14. Size:693K ncepower
nce30h15bk.pdf pdf_icon

Pb Free Producthttp://www.ncepower.comNCE30H15BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

8.15. Size:418K ncepower
nce30h12k.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H12KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

8.16. Size:694K ncepower
nce30h28.pdf pdf_icon

http://www.ncepower.comNCE30H28NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H28 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V ,I =280A Schematic diagramDS DR

8.17. Size:637K ncepower
nce30h10bg.pdf pdf_icon

http://www.ncepower.com NCE30H10BGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE30H10BG uses advanced trench technology and V =30V,I =100ADS Ddesign to provide excellent R with low gate charge. It can R

8.18. Size:371K ncepower
nce30h11g.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

8.19. Size:523K ncepower
nce30h10ak.pdf pdf_icon

http://www.ncepower.com NCE30H10AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

8.20. Size:384K ncepower
nce30h11k.pdf pdf_icon

http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

8.21. Size:398K ncepower
nce30h15.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

8.22. Size:816K cn vbsemi
nce30h10.pdf pdf_icon

NCE30H10www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewABS

8.23. Size:953K cn vbsemi
nce30h12k.pdf pdf_icon

NCE30H12Kwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0023 at VGS = 10 V 12030 82 nC0.0032 at VGS = 4.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFET

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