Справочник MOSFET. NCE40H11

 

NCE40H11 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE40H11
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 105 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 84 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 382 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCE40H11

 

 

NCE40H11 Datasheet (PDF)

 ..1. Size:721K  ncepower
 nce40h11.pdf

NCE40H11 NCE40H11

Pb Free ProductNCE40H11http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110A Schematic diagramDS DR

 0.1. Size:753K  ncepower
 nce40h11k.pdf

NCE40H11 NCE40H11

Pb Free ProductNCE40H11Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H11K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =110ADS DSchematic diagramR

 7.1. Size:669K  ncepower
 nce40h10k.pdf

NCE40H11 NCE40H11

NCE40H10Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =100ADS DSchematic diagramR

 7.2. Size:401K  ncepower
 nce40h12.pdf

NCE40H11 NCE40H11

Pb Free ProductNCE40H12http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.3. Size:458K  ncepower
 nce40h12k.pdf

NCE40H11 NCE40H11

Pb Free ProductNCE40H12Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.4. Size:392K  ncepower
 nce40h12i.pdf

NCE40H11 NCE40H11

Pb Free ProductNCE40H12Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 7.5. Size:772K  ncepower
 nce40h14.pdf

NCE40H11 NCE40H11

NCE40H14http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H14 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =140ADS DR

 7.6. Size:664K  ncepower
 nce40h12a.pdf

NCE40H11 NCE40H11

NCE40H12Ahttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40H12A uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =40V,I =120ADS DR

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