NCE40H32LL - Аналоги. Основные параметры
Наименование производителя: NCE40H32LL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 400
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 320
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 41
ns
Cossⓘ - Выходная емкость: 1360
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0013
Ohm
Тип корпуса:
TOLL
Аналог (замена) для NCE40H32LL
-
подбор ⓘ MOSFET транзистора по параметрам
NCE40H32LL технические параметры
..1. Size:383K ncepower
nce40h32ll.pdf 

http //www.ncepower.com NCE40H32LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE40H32LL uses advanced trench technology and VDS =40V ,ID =320A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
7.1. Size:401K ncepower
nce40h30d.pdf 

http //www.ncepower.com NCE40H30D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =300A RDS(ON)
8.1. Size:339K ncepower
nce40h25ll.pdf 

http //www.ncepower.com NCE40H25LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)
8.2. Size:669K ncepower
nce40h10k.pdf 

NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R
8.3. Size:753K ncepower
nce40h11k.pdf 

Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R
8.4. Size:401K ncepower
nce40h12.pdf 

Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
8.5. Size:398K ncepower
nce40h29d.pdf 

Pb Free Product http //www.ncepower.com NCE40H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)
8.6. Size:361K ncepower
nce40h21.pdf 

Pb Free Product http //www.ncepower.com NCE40H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)
8.8. Size:392K ncepower
nce40h12i.pdf 

Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
8.9. Size:336K ncepower
nce40h20a.pdf 

Pb Free Product http //www.ncepower.com NCE40H20A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)
8.10. Size:772K ncepower
nce40h14.pdf 

NCE40H14 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H14 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =140A DS D R
8.11. Size:721K ncepower
nce40h11.pdf 

Pb Free Product NCE40H11 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A Schematic diagram DS D R
8.12. Size:664K ncepower
nce40h12a.pdf 

NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R
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History: NCE40NP2815G
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