NCE40P06S. Аналоги и основные параметры

Наименование производителя: NCE40P06S

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.4 ns

Cossⓘ - Выходная емкость: 97 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: SOP8

Аналог (замена) для NCE40P06S

- подборⓘ MOSFET транзистора по параметрам

 

NCE40P06S даташит

 ..1. Size:396K  ncepower
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NCE40P06S

Pb Free Product http //www.ncepower.com NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)

 6.1. Size:556K  ncepower
 nce40p06j.pdf pdf_icon

NCE40P06S

http //www.ncepower.com NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S Schematic diagram General Features V = -40V,I = -

 7.1. Size:293K  ncepower
 nce40p05y.pdf pdf_icon

NCE40P06S

Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON)

 7.2. Size:371K  ncepower
 nce40p05s.pdf pdf_icon

NCE40P06S

Pb Free Product http //www.ncepower.com NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE40H11, NCE40H11K, NCE40H12A, NCE40H25LL, NCE40H30D, NCE40H32LL, NCE40NP2815G, NCE40P06J, AOD4184A, NCE40P15Q, NCE40P20Q, NCE40P20Q1, NCE40P25G, NCE40P30K, NCE40P40D, NCE4435B, NCE4435X