NCE40P06S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE40P06S
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.2 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 8.4 ns
Выходная емкость (Cd): 97 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
Тип корпуса: SOP8
NCE40P06S Datasheet (PDF)
nce40p06s.pdf
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Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)
nce40p06j.pdf
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http://www.ncepower.comNCE40P06JNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P06J uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SSchematic diagramGeneral Features V = -40V,I = -
nce40p05y.pdf
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Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)
nce40p05s.pdf
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Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)
nce40p07s.pdf
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Pb Free Producthttp://www.ncepower.com NCE40P07SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)
nce40p05y.pdf
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NCE40P05Ywww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
![NCE40P06S](https://alltransistors.com/images/us.png)
![NCE40P06S](https://alltransistors.com/images/es.png)
![NCE40P06S](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C