NCE40P15Q
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE40P15Q
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 15
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 23
nC
trⓘ -
Время нарастания: 11
ns
Cossⓘ - Выходная емкость: 135
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028
Ohm
Тип корпуса:
DFN3.3X3.3-8L
Аналог (замена) для NCE40P15Q
NCE40P15Q
Datasheet (PDF)
..1. Size:742K ncepower
nce40p15q.pdf 
http://www.ncepower.comNCE40P15QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P15Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -15ADS Dor power management.R
6.1. Size:349K ncepower
nce40p15k.pdf 
NCE40P15Khttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON)
7.1. Size:402K ncepower
nce40p13s.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P13SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)
8.1. Size:397K ncepower
nce40p70k.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P70KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON)
8.2. Size:294K ncepower
nce40p40d.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P40DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)
8.3. Size:470K ncepower
nce40p40k.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P40KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON)
8.4. Size:293K ncepower
nce40p05y.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P05YNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS =-40V,ID =-5.3A SRDS(ON)
8.5. Size:637K ncepower
nce40p25g.pdf 
http://www.ncepower.comNCE40P25GNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P25G uses uses advanced trench technology toGeneral Featuresprovide excellent R , This device is suitable for use as a load V =-40V,I =-25ADS(ON) DS Dswitch or power management. R =11.5m (typical) @ V =10VDS(ON) GSR =18.5m (typical) @ V =4.5VApplication DS(ON) GS DC/
8.6. Size:396K ncepower
nce40p06s.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P06SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)
8.7. Size:719K ncepower
nce40p20q1.pdf 
http://www.ncepower.comNCE40P20Q1NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q1 uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R
8.8. Size:371K ncepower
nce40p05s.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)
8.9. Size:361K ncepower
nce40p40l.pdf 
http://www.ncepower.com NCE40P40LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON)
8.10. Size:556K ncepower
nce40p06j.pdf 
http://www.ncepower.comNCE40P06JNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P06J uses advanced trench technology to provideDexcellent R , low gate charge and operation with gateDS(ON)Gvoltages .This device is suitable for use as a load switchingapplication and a wide variety of other applications.SSchematic diagramGeneral Features V = -40V,I = -
8.11. Size:716K ncepower
nce40p30k.pdf 
http://www.ncepower.comNCE40P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P30K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for high current load applications.General Features V =-40V,I =-30A Schematic diagramDS DR
8.12. Size:683K ncepower
nce40p20q.pdf 
http://www.ncepower.comNCE40P20QNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P20Q uses advanced trench technology to provideGeneral Featuresexcellent R , This device is suitable for use as a load switchDS(ON) V = -40V,I = -20ADS Dor power management.R
8.13. Size:446K ncepower
nce40p07s.pdf 
Pb Free Producthttp://www.ncepower.com NCE40P07SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON)
8.14. Size:869K cn vbsemi
nce40p05y.pdf 
NCE40P05Ywww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2
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