NCE50N1K2K - описание и поиск аналогов

 

NCE50N1K2K - Аналоги. Основные параметры


   Наименование производителя: NCE50N1K2K
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 10.5 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для NCE50N1K2K

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE50N1K2K технические параметры

 ..1. Size:800K  ncepower
 nce50n1k2k.pdf pdf_icon

NCE50N1K2K

NCE50N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and indus

 6.1. Size:820K  ncepower
 nce50n1k8f.pdf pdf_icon

NCE50N1K2K

NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 6.2. Size:807K  ncepower
 nce50n1k8k.pdf pdf_icon

NCE50N1K2K

NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

 6.3. Size:823K  ncepower
 nce50n1k8i.pdf pdf_icon

NCE50N1K2K

NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE4528K , NCE4555K , NCE4558K , NCE4606B , NCE5015S , NCE5020Q , NCE5055K , NCE5080K , IRLZ44N , NCE50N1K8D , NCE50N1K8F , NCE50N1K8I , NCE50N1K8K , NCE50N1K8R , NCE50N2K2D , NCE50N2K2F , NCE50N2K2I .

 

 
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