NCE50N2K2D. Аналоги и основные параметры

Наименование производителя: NCE50N2K2D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 18 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 8.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.25 Ohm

Тип корпуса: TO263

Аналог (замена) для NCE50N2K2D

- подборⓘ MOSFET транзистора по параметрам

 

NCE50N2K2D даташит

 ..1. Size:741K  ncepower
 nce50n2k2d.pdf pdf_icon

NCE50N2K2D

NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 5.1. Size:760K  ncepower
 nce50n2k2f.pdf pdf_icon

NCE50N2K2D

NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 5.2. Size:753K  ncepower
 nce50n2k2r.pdf pdf_icon

NCE50N2K2D

NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

 5.3. Size:705K  ncepower
 nce50n2k2i.pdf pdf_icon

NCE50N2K2D

NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind

ПОКАЗАТЬ ЕЩЁ

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