NCE50NF130T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE50NF130T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 186 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23.5 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 24.5 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 630 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO-247
Аналог (замена) для NCE50NF130T
NCE50NF130T Datasheet (PDF)
nce50nf130t.pdf
NCE50NF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf130v.pdf
NCE50NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf130f.pdf
NCE50NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf130k.pdf
NCE50NF130KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf130ll.pdf
NCE50NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and
nce50nf130d.pdf
NCE50NF130DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NCE50NF180
History: NCE50NF180
Список транзисторов
Обновления
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