NCE50NF330F. Аналоги и основные параметры
Наименование производителя: NCE50NF330F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 36 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm
Тип корпуса: TO-220F
Аналог (замена) для NCE50NF330F
- подборⓘ MOSFET транзистора по параметрам
NCE50NF330F даташит
nce50nf330f.pdf
NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
nce50nf330i.pdf
NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
nce50nf330.pdf
NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu
nce50nf330d.pdf
NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
Другие IGBT... NCE50NF180I, NCE50NF180K, NCE50NF220, NCE50NF220F, NCE50NF220I, NCE50NF220K, NCE50NF330, NCE50NF330D, SKD502T, NCE50NF330I, NCE50NF330K, NCE50NF520, NCE50NF520D, NCE50NF520F, NCE50NF520I, NCE50NF520K, NCE50NF600D
History: NCE50NF180I | 2SK2706
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Список транзисторов
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