NCE50NF330I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE50NF330I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 93 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 12.5 nC
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 36 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.33 Ohm
Тип корпуса: TO-251
Аналог (замена) для NCE50NF330I
NCE50NF330I Datasheet (PDF)
nce50nf330i.pdf
NCE50NF330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50nf330f.pdf
NCE50NF330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50nf330.pdf
NCE50NF330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and indu
nce50nf330d.pdf
NCE50NF330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50nf330k.pdf
NCE50NF330KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
