NCE50NF600I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE50NF600I
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 74 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.3 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 22 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO251
Аналог (замена) для NCE50NF600I
NCE50NF600I Datasheet (PDF)
nce50nf600i.pdf
NCE50NF600IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf600k.pdf
NCE50NF600KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf600d.pdf
NCE50NF600DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf600r.pdf
NCE50NF600RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf600f.pdf
NCE50NF600FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918