Справочник MOSFET. NCE50NF600R

 

NCE50NF600R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE50NF600R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.3 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 9.5 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 22 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для NCE50NF600R

 

 

NCE50NF600R Datasheet (PDF)

 ..1. Size:820K  ncepower
 nce50nf600r.pdf

NCE50NF600R NCE50NF600R

NCE50NF600RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 4.1. Size:793K  ncepower
 nce50nf600k.pdf

NCE50NF600R NCE50NF600R

NCE50NF600KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 4.2. Size:787K  ncepower
 nce50nf600i.pdf

NCE50NF600R NCE50NF600R

NCE50NF600IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 4.3. Size:823K  ncepower
 nce50nf600d.pdf

NCE50NF600R NCE50NF600R

NCE50NF600DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 4.4. Size:810K  ncepower
 nce50nf600f.pdf

NCE50NF600R NCE50NF600R

NCE50NF600FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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