Справочник MOSFET. NCE6003XM

 

NCE6003XM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6003XM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.096 Ohm
   Тип корпуса: SOT89
     - подбор MOSFET транзистора по параметрам

 

NCE6003XM Datasheet (PDF)

 ..1. Size:671K  ncepower
 nce6003xm.pdf pdf_icon

NCE6003XM

http://www.ncepower.comNCE6003XMNCE N-Channel Enhancement Mode Power MOSFETDescriptionDThe NCE6003XM uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)Guse as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =60V,I =3ADS DR

 6.1. Size:706K  ncepower
 nce6003xy.pdf pdf_icon

NCE6003XM

http://www.ncepower.comNCE6003XYNCE N-Channel Enhancement Mode Power MOSFETDDescriptionGThe NCE6003XY uses advanced trench technology to provideexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

 6.2. Size:642K  ncepower
 nce6003x.pdf pdf_icon

NCE6003XM

http://www.ncepower.comNCE6003XNCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE6003X uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SSchematic DiagramGeneral Features V =60V,I =3ADS DR

 7.1. Size:260K  ncepower
 nce6003m.pdf pdf_icon

NCE6003XM

Pb Free Producthttp://www.ncepower.com NCE6003MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SGeneral Feature Schematic diagram

ПОКАЗАТЬ ЕЩЁ

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History: KIA2808A-263 | FQP18N20V2 | NTD4857N

 

 
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