Справочник MOSFET. NCE6030K

 

NCE6030K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE6030K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 50 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 30 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 30 nC
   Время нарастания (tr): 2.6 ns
   Выходная емкость (Cd): 130 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
   Тип корпуса: TO-252

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NCE6030K Datasheet (PDF)

 ..1. Size:455K  ncepower
nce6030k.pdf

NCE6030K
NCE6030K

Pb Free Producthttp://www.ncepower.com NCE6030KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

 8.1. Size:403K  ncepower
nce603s.pdf

NCE6030K
NCE6030K

Pb Free Producthttp://www.ncepower.com NCE603SN and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 6

 8.2. Size:975K  ncepower
nce603583.pdf

NCE6030K
NCE6030K

NCE603583http://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE603583 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =40ADS DR

 8.3. Size:930K  cn vbsemi
nce603s.pdf

NCE6030K
NCE6030K

NCE603Swww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS =

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