NCE6030K - описание и поиск аналогов

 ..1. Size:455K  ncepower
 nce6030k.pdf 

Pb Free Product http //www.ncepower.com NCE6030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

 8.1. Size:403K  ncepower
 nce603s.pdf 

Pb Free Product http //www.ncepower.com NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 6

 8.2. Size:975K  ncepower
 nce603583.pdf 

NCE603583 http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE603583 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =40A DS D R

 8.3. Size:930K  cn vbsemi
 nce603s.pdf 

NCE603S www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS =