Справочник MOSFET. NCE6058AK

 

NCE6058AK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6058AK
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5.2 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для NCE6058AK

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE6058AK Datasheet (PDF)

 ..1. Size:594K  ncepower
nce6058ak.pdfpdf_icon

NCE6058AK

http://www.ncepower.comNCE6058AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR

 7.1. Size:663K  ncepower
nce6058k.pdfpdf_icon

NCE6058AK

http://www.ncepower.comNCE6058KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR

 7.2. Size:356K  ncepower
nce6058.pdfpdf_icon

NCE6058AK

Pb Free Producthttp://www.ncepower.com NCE6058NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =58A RDS(ON)

 8.1. Size:414K  ncepower
nce6050ka.pdfpdf_icon

NCE6058AK

Pb Free Producthttp://www.ncepower.com NCE6050KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

Другие MOSFET... NCE6020AQ , NCE6025Q , NCE6030K , NCE603583 , NCE6042AG , NCE6045XAG , NCE6045XG , NCE6058 , IRF830 , NCE6058K , NCE6065AG , NCE6065G , NCE6080 , NCE6080AI , NCE6080AK , NCE6080AT , NCE6080ED .

History: AP75T10GP | NCEP40P65QU | P5015BD | PM516BZ

 

 
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