NCE6080AI. Аналоги и основные параметры

Наименование производителя: NCE6080AI

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 110 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 290 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm

Тип корпуса: TO-251

Аналог (замена) для NCE6080AI

- подборⓘ MOSFET транзистора по параметрам

 

NCE6080AI даташит

 ..1. Size:757K  ncepower
 nce6080ai.pdf pdf_icon

NCE6080AI

http //www.ncepower.com NCE6080AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V Schematic diagram DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G

 6.1. Size:600K  ncepower
 nce6080ak.pdf pdf_icon

NCE6080AI

Pb Free Product NCE6080AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =6m (typical) @ V =10V Schematic diagram DS(ON) GS R =7m (typical) @ V =

 6.2. Size:393K  ncepower
 nce6080a.pdf pdf_icon

NCE6080AI

Pb Free Product NCE6080A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

 6.3. Size:801K  ncepower
 nce6080at.pdf pdf_icon

NCE6080AI

Pb Free Product NCE6080AT http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G

ПОКАЗАТЬ ЕЩЁ

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