NCE6080ED. Аналоги и основные параметры

Наименование производителя: NCE6080ED

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 110 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 290 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCE6080ED

- подборⓘ MOSFET транзистора по параметрам

 

NCE6080ED даташит

 ..1. Size:597K  ncepower
nce6080ed.pdfpdf_icon

NCE6080ED

http //www.ncepower.com NCE6080ED NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A Schematic diagram DS D R

 6.1. Size:595K  ncepower
nce6080ek.pdfpdf_icon

NCE6080ED

NCE6080EK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R

 7.1. Size:376K  ncepower
nce6080d.pdfpdf_icon

NCE6080ED

http //www.ncepower.com NCE6080D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A Schematic diagram RDS(ON)

 7.2. Size:468K  ncepower
nce6080k.pdfpdf_icon

NCE6080ED

Pb Free Product NCE6080K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

Другие IGBT... NCE6058AK, NCE6058K, NCE6065AG, NCE6065G, NCE6080, NCE6080AI, NCE6080AK, NCE6080AT, 7N60, NCE6080EK, NCE60H10, NCE60H10D, NCE60H10K, NCE60H15AT, NCE60H15T, NCE60H18, NCE60H28LL