Справочник MOSFET. NCE60H10

 

NCE60H10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60H10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 410 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCE60H10

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60H10 Datasheet (PDF)

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NCE60H10

http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 0.1. Size:617K  ncepower
nce60h10k.pdfpdf_icon

NCE60H10

http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR

 0.2. Size:607K  ncepower
nce60h10d.pdfpdf_icon

NCE60H10

http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 0.3. Size:388K  ncepower
nce60h10f.pdfpdf_icon

NCE60H10

Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

Другие MOSFET... NCE6065AG , NCE6065G , NCE6080 , NCE6080AI , NCE6080AK , NCE6080AT , NCE6080ED , NCE6080EK , STP65NF06 , NCE60H10D , NCE60H10K , NCE60H15AT , NCE60H15T , NCE60H18 , NCE60H28LL , NCE60H30T , NCE60N1K0D .

History: NCE60P04R | AO4803A | IPT60R028G7 | FDZ7296 | MMN25N03 | PQ5U2JN | IXTH1N200P3

 

 
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