NCE60N2K1I - аналоги и даташиты транзистора

 

NCE60N2K1I - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCE60N2K1I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 19 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 17.3 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.1 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для NCE60N2K1I

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE60N2K1I Datasheet (PDF)

 ..1. Size:737K  ncepower
 nce60n2k1i.pdf pdf_icon

NCE60N2K1I

NCE60N2K1IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

 5.1. Size:737K  ncepower
 nce60n2k1f.pdf pdf_icon

NCE60N2K1I

NCE60N2K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

 5.2. Size:755K  ncepower
 nce60n2k1r.pdf pdf_icon

NCE60N2K1I

NCE60N2K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

 5.3. Size:713K  ncepower
 nce60n2k1d.pdf pdf_icon

NCE60N2K1I

NCE60N2K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE60H30T , NCE60N1K0D , NCE60N1K0F , NCE60N1K0I , NCE60N1K0K , NCE60N1K0R , NCE60N2K1D , NCE60N2K1F , BS170 , NCE60N2K1K , NCE60N2K1R , NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F , NCE60N390I , NCE60N390K .

History: BUK9M3R3-40H | BUK9M53-60E | BUK9M5R0-40H

 

 
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