NCE60N390F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE60N390F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 13 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 32 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
Тип корпуса: TO220F
Аналог (замена) для NCE60N390F
NCE60N390F Datasheet (PDF)
nce60n390f.pdf
NCE60N390FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390i.pdf
NCE60N390IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390k.pdf
NCE60N390KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390.pdf
NCE60N390N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industrial
nce60n390d.pdf
NCE60N390DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD