Справочник MOSFET. NCE60NF055F

 

NCE60NF055F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60NF055F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

NCE60NF055F Datasheet (PDF)

 ..1. Size:807K  ncepower
nce60nf055f.pdfpdf_icon

NCE60NF055F

NCE60NF055FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

 4.1. Size:747K  ncepower
nce60nf055.pdfpdf_icon

NCE60NF055F

NCE60NF055N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industrial

 4.2. Size:872K  ncepower
nce60nf055t.pdfpdf_icon

NCE60NF055F

NCE60NF055TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

 4.3. Size:728K  ncepower
nce60nf055d.pdfpdf_icon

NCE60NF055F

NCE60NF055DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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