NCE60NF200 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE60NF200
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 22.8 nC
Время нарастания (tr): 16 ns
Выходная емкость (Cd): 60 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCE60NF200
NCE60NF200 Datasheet (PDF)
nce60nf200.pdf
NCE60NF200N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and industr
nce60nf200i.pdf
NCE60NF200IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200k.pdf
NCE60NF200KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200f.pdf
NCE60NF200FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200d.pdf
NCE60NF200DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200t.pdf
NCE60NF200TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
