NCE60NP4035K. Аналоги и основные параметры

Наименование производителя: NCE60NP4035K

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5.1 ns

Cossⓘ - Выходная емкость: 112 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm

Тип корпуса: TO-252-4L

Аналог (замена) для NCE60NP4035K

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NP4035K даташит

 ..1. Size:978K  ncepower
 nce60np4035k.pdf pdf_icon

NCE60NP4035K

NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R

 7.1. Size:913K  ncepower
 nce60np2012k.pdf pdf_icon

NCE60NP4035K

NCE60NP2012K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =20A DS D R

 7.2. Size:854K  ncepower
 nce60np1515k.pdf pdf_icon

NCE60NP4035K

NCE60NP1515K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =15A DS D R

 7.3. Size:1011K  ncepower
 nce60np09s.pdf pdf_icon

NCE60NP4035K

NCE60NP09S http //www.ncepower.com NCE 60V Complementary MOSFET Description The NCE60NP09S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =9A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE60NF730F, NCE60NF730I, NCE60NF730K, NCE60NF730R, NCE60NP09S, NCE60NP1515K, NCE60NP2012K, NCE60NP2016G, IRFP250, NCE60P02Y, NCE60P03R, NCE60P03Y, NCE60P04SN, NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS