NCE60NP4035K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE60NP4035K
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 80 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 38.5 nC
trⓘ - Время нарастания: 5.1 ns
Cossⓘ - Выходная емкость: 112 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: TO-252-4L
Аналог (замена) для NCE60NP4035K
NCE60NP4035K Datasheet (PDF)
nce60np4035k.pdf
NCE60NP4035Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP4035K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =40ADS DR
nce60np2012k.pdf
NCE60NP2012Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2012K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesN channelSchematic diagram V =60V,I =20ADS DR
nce60np1515k.pdf
NCE60NP1515Khttp://www.ncepower.comNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP1515K uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =15ADS DR
nce60np09s.pdf
NCE60NP09Shttp://www.ncepower.comNCE 60V Complementary MOSFETDescriptionThe NCE60NP09S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =9ADS DR
nce60np2016g.pdf
Pb Free Producthttp://www.ncepower.comNCE60NP2016GNCE N&P-Channel complementary Power MOSFETDescriptionThe NCE60NP2016G uses advanced trench technologyand design to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety of applications.General FeaturesSchematic diagramN channel V =60V,I =20ADS DR
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 15NM70G-TF3-T | NP55N055SDG
History: 15NM70G-TF3-T | NP55N055SDG
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918